| Datenblatt-Suchmaschine für elektronische Bauteile |
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NP20P06SLG Datenblatt(PDF) 6 Page - Renesas Technology Corp |
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NP20P06SLG Datenblatt(HTML) 6 Page - Renesas Technology Corp |
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6 / 9 page ![]() Data Sheet D19076EJ1V0DS 4 NP20P06SLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 0 -10 -20 -30 -40 -50 -60 0 -1-2 -3-4-5 VGS = −10 V Pulsed −4.5 V VDS - Drain to Source Voltage - V -0.001 -0.01 -0.1 -1 -10 -100 0 -1-2 -3-4 -5 VDS = −10 V Pulsed Tch = −55°C −25°C 25 °C 75 °C 125 °C 150 °C 175 °C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0 -0.5 -1 -1.5 -2 -2.5 -3 -75 -25 25 75 125 175 225 VDS = VGS ID = −250 μA Tch - Channel Temperature - °C 0.1 1 10 100 -0.1 -1 -10 -100 VDS = −10 V Pulsed Tch = −55°C −25°C 25 °C 75 °C 125 °C 150 °C 175 °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 20 40 60 80 100 -0.1 -1 -10 -100 −10 V Pulsed VGS = −4.5 V ID - Drain Current - A 0 20 40 60 80 100 0 -5 -10 -15 -20 Pulsed ID = −20 A −10 A −4 A VGS - Gate to Source Voltage - V |
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