NP20P06SLG datasheet(7/9 Pages) RENESAS

Teilenummer	NP20P06SLG

Bauteilbeschribung	SWITCHING P-CHANNEL POWER MOSFET

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Hersteller	RENESAS [Renesas Technology Corp]

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Data Sheet D19076EJ1V0DS

NP20P06SLG

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

100

-75

-25

125

175

225

ID =

−10 A

Pulsed

−10 V

VGS =

−4.5 V

Tch - Channel Temperature -

°C

100

1000

10000

-0.1

-1

-10

-100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

1000

-0.1

-1

-10

-100

td(off)

td(on)

VDD =

−30 V

VGS =

−10 V

RG = 0

ID - Drain Current - A

-10

-20

-30

-40

-50

-60

102030

-2

-4

-6

-8

-10

-12

VDS

ID =

−20 A

VGS

VDD =

−48 V

−30 V

−12 V

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-0.01

-0.1

-1

-10

-100

0.5

1.5

VGS =

−10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

100

1000

-0.1

-1

-10

-100

di/dt =

−100 A/μs

VGS = 0 V

IF - Diode Forward Current - A

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