NP20P06SLG datasheet(3/9 Pages) RENESAS

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MOS FIELD EFFECT TRANSISTOR

NP20P06SLG

SWITCHING

P-CHANNEL POWER MOSFET

DATA SHEET

Document No. D19076EJ1V0DS00 (1st edition)

Date Published December 2007 NS

Printed in Japan

2007

DESCRIPTION

The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP20P06SLG-E1-AY

Note

NP20P06SLG-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

Note Pb-free (This product does not contain Pb in external electrode.)

FEATURES

• Super low on-state resistance

RDS(on)1 = 48 m

Ω MAX. (VGS = −10 V, ID = −10 A)

RDS(on)2 = 64 m

Ω MAX. (VGS = −4.5 V, ID = −10 A)

• Low input capacitance

Ciss = 1650 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−60

Gate to Source Voltage (VDS = 0 V)

VGSS

m20

Drain Current (DC) (TC = 25

°C)

ID(DC)

m20

Drain Current (pulse)

Note1

ID(pulse)

m60

Total Power Dissipation (TC = 25

°C)

PT1

Total Power Dissipation (TA = 25

°C)

PT2

1.2

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Single Avalanche Current

Note2

IAS

Single Avalanche Energy

Note2

EAS

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

3.9

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

125

°C/W

(TO-252)

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