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AN2014 Datenblatt(PDF) 18 Page - STMicroelectronics

Teilenummer AN2014
Bauteilbeschribung  How a designer can make the most of STMicroelectronics serial EEPROMs
PDF  65 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2014 Datenblatt(HTML) 18 Page - STMicroelectronics

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Recommendations to improve EEPROM reliability
AN2014
18/65
DocID10701 Rev 10
3
Recommendations to improve EEPROM reliability
3.1
Electrostatic discharges (ESD)
ESD damage can happen any time during the product lifetime, from the moment it is
delivered to the final field service operation. ESD damage can be destructive or latent. In the
first case, a simple functional test can screen faulty devices; in the second case, the part is
partially damaged and may be able to operate correctly, but its operating life may be
drastically reduced, causing the device to fail prematurely in field service.
3.1.1
What is ESD?
Static Electricity results from the contact and separation of two bodies, which creates an
unbalance in the number of electrons at the surface of the bodies. Practically, the bodies
become charged to a specific electrical potential that depends on the material from which
they are made (see Table 2). An electrostatic discharge is defined as the transfer of charges
between two bodies at different electrical potentials. It is instantaneous (a few
nanoseconds) and thus induces high energy peaks which are very difficult to control and
predict.
3.1.2
How to prevent ESD?
An ESD can be managed if the discharge is driven through a known and controlled path on
the silicon die. Specific design rules and techniques can be used by designers to better
protect against ESDs, such as Faraday shields, perimeter ground lines or ground planes.
In a production line, the part handling until the assembly line has to be carefully ESD-
protected.
3.1.3
ST EEPROM ESD protection
ST EEPROM devices offer a specific protection circuit against Human Body Model ESDs in
accordance with AEC-Q100-002.
During write operations, the EEPROM is much more sensitive to ESDs because of the
architecture of its internal high voltage generator. Applications exposed to ESD should avoid
writing data in the EEPROM when an ESD is more likely to occur.
Table 2. ESD generation(1)
1. The charge unbalance depends on many factors such as the contact area, separation speed and relative
humidity.
ESD generation means
Static voltage levels
Walking across a carpet
1,500 V to 35,000 V
Worker on a bench
100 V to 6,000 V
Chair with urethane foam
1,500 V to 18,000 V



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