CGHV59070 datasheet(2/10 Pages) CREE

2 / 10 page

CGHV59070 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

DSS

150

Volts

25˚C

Gate-to-Source Voltage

-10, +2

Volts

25˚C

Storage Temperature

STG

-65, +150

˚C

Operating Junction Temperature

225

˚C

Maximum Forward Gate Current

GMAX

10.4

25˚C

Maximum Drain Current1

DMAX

6.3

25˚C

Soldering Temperature2

245

˚C

Screw Torque

in-oz

Thermal Resistance, Junction to Case3

2.99

˚C/W

85˚C, CW @ P

DISS = 57 W

Thermal Resistance, Junction to Case3

0.85

˚C/W

85˚C, 100 μsec, 10% Duty Cycle @ P

DISS = 70 W

Case Operating Temperature2

-40, +150

˚C

Note:

Current limit for long term, reliable operation

Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

Simulated for the CGHV59070F at P

DISS = 57.6 CW or PDISS = 70 W Pulsed

See also, the Power Dissipation De-rating Curve on Page 8.

Electrical Characteristics (T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics1

Gate Threshold Voltage

GS(th)

-3.8

-2.8

-2.3

DS = 10 V, ID = 10.4 mA

Saturated Drain Current2

7.8

10.4

–

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown

Voltage

150

–

GS = -8 V, ID = 10.4 mA

RF Characteristics3 (T

C = 25˚C, F0 = 2.5 GHz unless otherwise noted)

Output Power

OUT1

–

100

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz

Output Power

OUT1

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz

Output Power

OUT1

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz

Drain Efficiency

EFF

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz

Drain Efficiency

EFF

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz

Drain Efficiency

EFF

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz

Power Gain

–

14.5

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz

Power Gain

–

14.3

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz

Power Gain

–

13.3

–

DD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz

Output Mismatch Stress

VSWR

–

5 : 1

No damage at all phase angles, V

DD = 50 V, IDQ = 0.15A, PIN = 35.5 dBm Pulsed

Dynamic Characteristics

Input Capacitance

–

DS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance

–

109

–

DS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance

–

0.26

–

DS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

Measured on wafer prior to packaging.

Scaled from PCM data.

Measured in CGHV59070F-AMP

Drain Efficiency = P

OUT / PDC

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