CGHV59070 datasheet(1/10 Pages) CREE

Teilenummer	CGHV59070

Bauteilbeschribung	70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

PDF	10 Pages

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Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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CGHV59070

70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor

(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband

solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high

gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed

amplifier circuits. The transistor is available in a flange and pill package.

Package Type: 440224, 440170

PN’s: CGHV59070F, CGHV59070P

Typical Performance Over 4.8 - 5.9 GHz (T

C = 25˚C)

Parameter

4.8 GHz

5.0 GHz

5.2 GHz

5.4 GHz

5.6 GHz

5.8 GHz

5.9 GHz

Units

Power Gain at 50 V

13.7

14.2

14.5

14.6

14.3

13.7

13.3

dB

Output Power at 50 V

84

93

101

102

95

84

76

W

Drain Efficiency at 50 V

55

56

57

56

54

50

48

%

Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)

Features

• 4.4 - 5.9 GHz Operation

• 90 W P

OUT typical at 50 V

• 14 dB Power Gain

• 55 % Drain Efficiency

• Internally Matched

Applications

• Marine Radar

• Weather Monitoring

• Air Traffic Control

• Maritime Vessel Traffic Control

• Port Security

• Troposcatter Communications

• Beyond Line of Sight - BLOS

• Satellite Communications

PRELIMINARY

Ähnliche Beschreibung - CGHV59070

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Cree, Inc	CGHV1J070D	784Kb / 9P	70 W, 18.0 GHz, GaN HEMT Die Rev 0.5
	CGHV40050F	866Kb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev 1.0
	CG2H30070F	1Mb / 13P	70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT
	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
	CMPA5259050S	1Mb / 16P	50 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier
WOLFSPEED, INC.	CG2H30070F	1Mb / 13P	70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Rev 3.1 - April 2020
	CGHV1J070D	982Kb / 10P	70 W, 18.0 GHz, GaN HEMT Die Rev. 2.0, 2022-7-27
	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev. 2.4, 2022-12-2
	CGHV50200F	1Mb / 15P	200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Rev. 3.2, 2022-12-8
	CGHV59070	2Mb / 14P	70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT Rev. 2.7, 2022-12-8

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Ähnliche Teilenummer - CGHV59070

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