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H30R1353 Datenblatt(PDF) 7 Page - Infineon Technologies AG

Teilenummer H30R1353
Bauteilbeschribung  Reverse conducting IGBT with monolithic body diode
PDF  15 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R1353 Datenblatt(HTML) 7 Page - Infineon Technologies AG

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7
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 1.
Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj
≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1
10
100
1000
0.1
1
10
100
tp=1µs
5µs
10µs
50µs
1ms
10ms
DC
Figure 2.
Powerdissipationasafunctionofcase
temperature
(Tvj
≤175°C)
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
0
50
100
150
200
250
300
350
Figure 3.
Collectorcurrentasafunctionofcase
temperature
(VGE
≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Figure 4.
Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.0
1.0
2.0
3.0
4.0
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V



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