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H30R1353 Datenblatt(PDF) 8 Page - Infineon Technologies AG

Teilenummer H30R1353
Bauteilbeschribung  Reverse conducting IGBT with monolithic body diode
PDF  15 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R1353 Datenblatt(HTML) 8 Page - Infineon Technologies AG

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8
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 5.
Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
1
2
3
4
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6.
Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
4
5
6
7
8
9
10
11
12
0
10
20
30
40
50
60
70
80
90
Tj=25°C
Tj=175°C
Figure 7.
Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
1.0
1.5
2.0
2.5
3.0
IC=15A
IC=30A
IC=60A
Figure 8.
Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10
Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
IC,COLLECTORCURRENT[A]
0
10
20
30
40
50
60
10
100
1000
td(off)
tf



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