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H30R1353 Datenblatt(PDF) 9 Page - Infineon Technologies AG

Teilenummer H30R1353
Bauteilbeschribung  Reverse conducting IGBT with monolithic body diode
PDF  15 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R1353 Datenblatt(HTML) 9 Page - Infineon Technologies AG

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9
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 9.
Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[
Ω]
0
10
20
30
40
50
10
100
1000
td(off)
tf
Figure 10.
Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=30A,RG(on)=10
Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
25
50
75
100
125
150
175
10
100
1000
td(off)
tf
Figure 11.
Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.75mA)
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
2
3
4
5
6
7
8
typ.
min.
max.
Figure 12.
Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10
Ω,RG(off)=10Ω,
dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
Eoff



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