| Datenblatt-Suchmaschine für elektronische Bauteile |
|
The question interval is too short.
Please try again in a few seconds.
Hello, Please ask a question about LH52D1000 Datasheet
# Example questions:
➢ Describe the conditions required for data retention as outlined in figure 6 and what signal is used to control it.
➢ What is the maximum data retention supply current (iccdr) at a temperature of 40°c with a vccdr of 0v?
➢ What is the minimum read cycle time (trc) for this memory chip, and under what test conditions is this value specified?
## Summary of the LH52D1000 CMOS 1M (128K x 8) Static RAM Datasheet
This document is a detailed datasheet for the LH52D1000, a CMOS 1M (128K x 8) Static RAM. Here's a breakdown of the key information:
1. Core Features:
️· Capacity: 1 Megabit (1Mbit), organized as 128K x 8.
️· Technology: CMOS Static RAM (SRAM).
️· Voltage: Operates at a voltage range of 2.7V to 3.6V.
️· Low Power Consumption: Features low active and standby power consumption.
️· Data Retention: Capable of retaining data with a low-power retention supply.
2. Performance Characteristics:
️· Read Cycle Time (tRC): 85ns (maximum)
️· Write Cycle Time (tWC): 85ns (minimum)
️· Address Access Time (tAA): 85ns (maximum)
️· Output Enable Access Time (tOE): 45ns (maximum)
3. Key Electrical Parameters:
️· Supply Voltage (VCC): 2.7V - 3.6V
️· Input High Voltage (VIH): VCC x 0.7
️· Input Low Voltage (VIL): VCC x 0.3
️· Data Retention Voltage (VCCDR): 2.0V - 3.6V
4. Timing Diagrams & Characteristics:
The datasheet includes several timing diagrams illustrating:
️· Read Cycle: Details timing requirements for accessing data.
️· Write Cycle (OE Controlled & OE Low Fixed): Details timing for writing data to the RAM, with variations on how Output Enable (OE) is handled.
️· Data Retention Cycle: Shows how to maintain data with a low-power retention supply.
5. Package Information:
️· The datasheet contains package diagrams and dimensions for the physical package of the RAM.
6. Ordering Information:
️· Provides information on how to order the chip.
7. Other Important Characteristics:
️· Input/Output Capacitance: 10pF (maximum).
️· Data Retention Current (ICCDR): Dependent on temperature (1.0µA typical at 25°C; up to 35µA at 40°C).
️· Pin Capacitance: Various values given for input and output pins.
Overall:
This datasheet provides a comprehensive overview of the LH52D1000 SRAM, including electrical characteristics, timing parameters, package information, and ordering details. It is intended for engineers designing systems that incorporate this memory chip. The detailed timing diagrams and specifications are crucial for ensuring proper operation and reliable data access.
## Summary of the LH52D1000 CMOS 1M (128K x 8) Static RAM Datasheet
This document is a detailed datasheet for the LH52D1000, a CMOS 1M (128K x 8) Static RAM. Here's a breakdown of the key information:
1. Core Features:
️· Capacity: 1 Megabit (1Mbit), organized as 128K x 8.
️· Technology: CMOS Static RAM (SRAM).
️· Voltage: Operates at a voltage range of 2.7V to 3.6V.
️· Low Power Consumption: Features low active and standby power consumption.
️· Data Retention: Capable of retaining data with a low-power retention supply.
2. Performance Characteristics:
️· Read Cycle Time (tRC): 85ns (maximum)
️· Write Cycle Time (tWC): 85ns (minimum)
️· Address Access Time (tAA): 85ns (maximum)
️· Output Enable Access Time (tOE): 45ns (maximum)
3. Key Electrical Parameters:
️· Supply Voltage (VCC): 2.7V - 3.6V
️· Input High Voltage (VIH): VCC x 0.7
️· Input Low Voltage (VIL): VCC x 0.3
️· Data Retention Voltage (VCCDR): 2.0V - 3.6V
4. Timing Diagrams & Characteristics:
The datasheet includes several timing diagrams illustrating:
️· Read Cycle: Details timing requirements for accessing data.
️· Write Cycle (OE Controlled & OE Low Fixed): Details timing for writing data to the RAM, with variations on how Output Enable (OE) is handled.
️· Data Retention Cycle: Shows how to maintain data with a low-power retention supply.
5. Package Information:
️· The datasheet contains package diagrams and dimensions for the physical package of the RAM.
6. Ordering Information:
️· Provides information on how to order the chip.
7. Other Important Characteristics:
️· Input/Output Capacitance: 10pF (maximum).
️· Data Retention Current (ICCDR): Dependent on temperature (1.0µA typical at 25°C; up to 35µA at 40°C).
️· Pin Capacitance: Various values given for input and output pins.
Overall:
This datasheet provides a comprehensive overview of the LH52D1000 SRAM, including electrical characteristics, timing parameters, package information, and ordering details. It is intended for engineers designing systems that incorporate this memory chip. The detailed timing diagrams and specifications are crucial for ensuring proper operation and reliable data access.
| Part No. | LH52D1000 |
| Manufacturer | SHARP |
| Size | 81 Kbytes |
| Pages | 12 pages |
| Description | CMOS 1M (128K x 8) Static Ram |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |