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LH52D1000 Datenblatt(PDF) 9 Page - Sharp Corporation |
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LH52D1000 Datenblatt(HTML) 9 Page - Sharp Corporation |
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9 / 12 page ![]() tCDR VCC 2.7 V 2.2 V VCCDR 0 V CE1 CE1 ≥ VCCDR - 0.2 V DATA RETENTION MODE tR 52D1000S-6 tCDR VCC CE2 DATA RETENTION MODE tR 2.7 V 0.6 V VCCDR 0 V CE2 CONTROL CE1 CONTROL (NOTE) CE2 ≤ 0.2 V NOTE: To control the data retention mode at CE1, fix the input level of CE2 between VCCDR and VCCDR - 0.2 V or 0 V to 0.2 V during the data retention mode. Figure 6. Data Retention (CE1 Controlled) CMOS 1M (128K × 8) Static RAM LH52D1000 9 |
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