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LH52D1000 Datenblatt(PDF) 3 Page - Sharp Corporation

Teilenummer LH52D1000
Bauteilbeschribung  CMOS 1M (128K x 8) Static Ram
PDF  12 Pages
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Hersteller  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH52D1000 Datenblatt(HTML) 3 Page - Sharp Corporation

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TRUTH TABLE
CE1
CE2
WE
OE
MODE
I/O1 – I/O8
SUPPLY CURRENT
NOTE
H

Standby
High
impedance
Standby (ISB)1
L

LH
L
Write
Data input
Active (ICC)1
L
H
H
L
Read
Data output
Active (ICC)
L
H
H
H
Output disable
High
impedance
Active (ICC)
NOTE:
1.
 = Don’t care
L = Low
H = High
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
VCC
-0.3 to + 4.6
V
1
Input voltage
VIN
- 0.3 to VCC + 0.3
V
1, 2
Operating temperature
TOPR
-40 to +85
°C
Storage temperature
TSTG
-55 to +1 50
°C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
2.
Undershoot of -3.0 V is allowed width of pulse below 50 ns.
RECOMMENDED DC OPERATING CONDITIONS (TA = -40°C to +85°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
VCC
2.7
3.0
3.6
V
Input voltage
VIH
2.0
VCC + 0.3
V
VIL
–0.3
0.6
V
1
NOTE:
1.
Undershoot of –3.0 V is allowed width of pulse below 50 ns.
DC ELECTRICAL CHARACTERISTICS (TA = -25°C to +85°C, VCC = 2.7 V to 3.6 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input
leakage
current
ILI
VIN = 0 to VCC
–1.0
1.0
µA
Output
leakage
current
ILO
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = 0 V to VCC
–1.0
1.0
µA
Operating
supply
current
ICC
VIN = VIL or VIH, CE1 = VIL, WE = VIH
CE2 = VIH, II/O = 0 mA
tCYCLE = Min

40
mA
ICC1
CE1 = 0.2 V, VIN = 0.2 V or VCC - 0.2 V
CE2, WE = VCC - 0.2 V, II/O = 0 mA
tCYCLE = 1.0 µs

6
Standby
current
ISB
CE1 = VCC – 0.2 V or
CE2 = 0.2 V

45
µA
ISB1
CE1 = VIH or CE2 = VIL

2.0
mA
Output
voltage
VOL
IOL = 2.1 mA

0.4
V
VOH
IOH = –0.5 mA
VCC - 0.5

V
CMOS 1M (128K
× 8) Static RAM
LH52D1000
3



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