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LH52D1000 Datenblatt(PDF) 1 Page - Sharp Corporation |
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LH52D1000 Datenblatt(HTML) 1 Page - Sharp Corporation |
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1 / 12 page ![]() LH52D1000 CMOS 1M (128K × 8) Static Ram FEATURES •• Access time: 85 ns (MAX.), 100 ns (MAX.) •• Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 µs) Standby: 45 µA (MAX.) •• Data Retention: 1.0 µA (MAX. V CCDR = 3 V, tA = 25 °C) •• Single power supply: 2.7 V to 3.6 V •• Operating temperature: -40°C to +85°C •• Fully-static operation •• Three-state output •• Not designed or rated as radiation hardened •• Packages: 32-pin 8 × 20 mm2 TSOP 32-pin 8 × 13.4 mm2 STSOP •• N-type bulk silicon DESCRIPTION The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 2 3 4 5 6 9 10 7 8 11 1 32 31 30 29 26 25 28 27 24 23 OE A10 32-PIN TSOP 32-PIN STSOP 12 15 13 14 21 20 22 19 18 A8 CE2 A15 I/O3 I/O2 A1 I/O8 CE1 I/O6 I/O7 I/O5 I/O4 A0 A2 52D1000S-1 VCC A16 A12 A7 A6 A5 16 17 A4 WE NC A3 GND TOP VIEW A9 A11 A13 A14 I/O1 Figure 1. Pin Connections for TSOP and STSOP Packages 1 |
Ähnliche Teilenummer - LH52D1000 |
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Ähnliche Beschreibung - LH52D1000 |
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