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LH52D1000 Datenblatt(PDF) 4 Page - Sharp Corporation

Teilenummer LH52D1000
Bauteilbeschribung  CMOS 1M (128K x 8) Static Ram
PDF  12 Pages
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Hersteller  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH52D1000 Datenblatt(HTML) 4 Page - Sharp Corporation

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AC ELECTRICAL CHARACTERISTICS
AC Test Conditions
PARAMETER
MODE
NOTE
Input pulse level
0.4 V to 2.4 V
Input rise and fall time
5 ns
Input and output timing Ref. level
1.5 V
Output load
100 pF + 1TTL
1
NOTE:
1.
Including scope and jig capacitance.
READ CYCLE (TA = -40°C to +85°C, VCC = 2.7 V to 3.6 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read cycle time
tRC
85
ns
Address access time
tAA
85
ns
CE1 access time
tACE1
85
ns
CE2 access time
tACE2
85
ns
Output enable to output valid
tOE
45
ns
Output hold from address change
tOH
10
ns
CE1 Low to output active
tLZ1
5
ns
1
CE2 High to output active
tLZ2
5
ns
1
OE Low to output active
tOLZ
0
ns
1
CE1 High to output in High impedance
tHZ1
035
ns
1
CE2 Low to output in High impedance
tHZ2
035
ns
1
OE High to output in High impedance
tOHZ
035
ns
1
NOTE:
1.
Active output to High impedance and High impedance to output active tests specified for a
±200 mV transition
from steady state levels into the test load.
WRITE CYCLE (TA = -40°C to +85°C, VCC = 2.7 V to 3.6 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Write cycle time
tWC
85
ns
CE1 Low to end of write
tCW1
75
ns
CE2 High to end of write
tCW2
75
ns
Address setup time
tAS
0
ns
Write pulse width
tWP
60
ns
Write recovery time
tWR
0
ns
Input data setup time
tDW
35
ns
Input data hold time
tDH
0
ns
WE High to output active
tOW
0
ns
1
WE Low to output in High impedance
tWZ
0
ns
1
OE High to output in High impedance
tOHZ
035
ns
1
NOTE:
1.
Active output to High impedance and High impedance to output active tests specified for a
±200 mV transition
from steady state levels into the test load.
LH52D1000
CMOS 1M (128K
× 8) Static RAM
4



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