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Teilenummer	STAV58030J2

Bauteilbeschribung	GaN HEMT 50V, 30W,4.0-6.0GHz RF Power Transistor

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Hersteller	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

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Ähnliche Teilenummer - STAV58030J2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Innogration Technologie...	STAV58010P2	1Mb / 5P	Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor
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	STAV58025P2	1Mb / 6P	Gallium Nitride 50V, 25W, DC-6GHz RF Power Transistor
	STAV58050J2	1Mb / 5P	GaN HEMT 50V, 50W,5.0-6.0GHz RF Power Transistor

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
M/A-COM Technology Solu...	MAGX-000035-030000	953Kb / 7P	GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
M/A-COM Technology Solu...	MAGX-001220-100L00	833Kb / 6P	GaN HEMT Power Transistor
Ampleon Netherlands B.V...	CLF1G0035-100	1Mb / 20P	Broadband RF power GaN HEMT Rev. 6 ??8 January 2016
	CLF1G0035-100P	1Mb / 16P	Broadband RF power GaN HEMT Rev. 4 ??24 February 2016
	CLF1G0035-200P	1Mb / 19P	Broadband RF power GaN HEMT Rev. 1 ??22 April 2016
	CLF1G0035-50	1Mb / 19P	Broadband RF power GaN HEMT Rev. 6 ??8 January 2016
	CLF1G0060-10	1Mb / 18P	Broadband RF power GaN HEMT Rev. 5 ??18 February 2016
	CLF1G0060-30	1Mb / 19P	Broadband RF power GaN HEMT Rev. 7 ??5 February 2018
	CLF3H0035-100	1Mb / 12P	Broadband RF power GaN HEMT Rev. 1 ??23 December 2021
	CLF3H0060-30	2Mb / 29P	Broadband RF power GaN HEMT Rev. 1 ??20 December 2021