T15V2M08A datasheet(4/12 Pages) TMT

4 / 12 page

Preliminary T15V2M08A

Taiwan Memory Technology, Inc. reserves the right

P. 4

Publication Date: MAR. 2001

to change products or specifications without notice.

Revision:0.A

OPERATING CHARACTERISTICS

(Vcc = 2.7 to 3. 6V, Gnd = 0V, Ta = -40

°C to 85°C)

-55

-70

-100

PARAMETER

SYM.

TEST CONDITIONS

Min

Max

Min

Max

Min

Max

UNIT

Input Leakage

Current

I

LI

Vcc = Max,

VIN = Gnd to Vcc

Output Leakage

Current

I

LO

CE1

= VIH or CE2= VIL

or OE= VIH

or WE = VIL

VOUT= Gnd to Vcc

Operating Power

Supply Current

ICC

CE1 = VIL,CE2= VIH,

WE =VIH, OE = VIH ,

VIN = VIH or VIL,

IOUT=0mA

ICC1

Cycle time=1us,

100% duty, IOUT=0mA,

CE1

≤ 0.2V,

CE2

≥ V

CC-0.2V,

VIN ≤ 0.2V

Average Operating

Current

ICC2

Cycle time=min,

100% duty, IOUT=0mA,

CE1

= VIL,CE2= VIH ,

VIN = VIH or VIL

Standby Power

Supply Current

(TTL Level)

CE1 =V

CE2= VIL

0.5

Standby Power

Supply Current

(CMOS Level)

SB1

CE1

≥ Vcc-0.2V,

CE2

≥ V

CC-0.2V

or CE2

≤ 0.2V

VIN ≤ 0.2V or

VIN ≥ Vcc-0.2V

Output Low Voltage

OL= 2.0mA

0.4

Output High Voltage

OH = -1.0 mA

2.2

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