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T15V2M08A Datenblatt(PDF) 5 Page - Taiwan Memory Technology

Teilenummer T15V2M08A
Bauteilbeschribung  256K X 8 LOW POWER CMOS STATIC RAM
PDF  12 Pages
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Hersteller  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15V2M08A Datenblatt(HTML) 5 Page - Taiwan Memory Technology

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TE
CH
tm
Preliminary T15V2M08A
Taiwan Memory Technology, Inc. reserves the right
P. 5
Publication Date: MAR. 2001
to change products or specifications without notice.
Revision:0.A
RECOMMENDED OPERATING CONDITIONS
(Ta = -40
°C to 85°C**)
PARAMETER
SYM
MIN
TYP
MAX
UNIT
Vcc
2.7
3.0
3.6
V
Supply Voltage
Gnd
0.0
0.0
0.0
V
V
IH
2.1
-
Vcc+0.3
V
Input Voltage
V
IL
-0.3
-
0.6
V
CAPACITANCE
(f = 1 MHz, Ta = 25
°C,)
PARAMETER
SYMBOL
CONDITION
MAX.
UNIT
Input Capacitance
C
IN
V
IN = 0V
6
pF
Input/ Output Capacitance
C
I /O
V
IN
=V
OUT= 0V
8
pF
Note: This parameter is guaranteed by device characterization and is not production tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
0.6V to 2.1V
Input Rise and Fall Times
3.0 ns
Input and Output Timing Reference Level
1.4V
C
L =30pF+1TTL Load(55ns/70ns)
Output Load
C
L =100pF+1TTL Load(Load for 100ns)
AC TEST LOADS AND WAVEFORM
DQ
Z
0
= 50
ohm
50
ohm
30 pF
Vt =1.4V
Fig.A * Including Scope and Jig Capacitance
TTL
C
L
*
Fig.B Output Load Equivalent
R
L
C
L



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