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T15V2M08A Datenblatt(PDF) 5 Page - Taiwan Memory Technology |
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T15V2M08A Datenblatt(HTML) 5 Page - Taiwan Memory Technology |
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5 / 12 page ![]() TE CH tm Preliminary T15V2M08A Taiwan Memory Technology, Inc. reserves the right P. 5 Publication Date: MAR. 2001 to change products or specifications without notice. Revision:0.A RECOMMENDED OPERATING CONDITIONS (Ta = -40 °C to 85°C**) PARAMETER SYM MIN TYP MAX UNIT Vcc 2.7 3.0 3.6 V Supply Voltage Gnd 0.0 0.0 0.0 V V IH 2.1 - Vcc+0.3 V Input Voltage V IL -0.3 - 0.6 V CAPACITANCE (f = 1 MHz, Ta = 25 °C,) PARAMETER SYMBOL CONDITION MAX. UNIT Input Capacitance C IN V IN = 0V 6 pF Input/ Output Capacitance C I /O V IN =V OUT= 0V 8 pF Note: This parameter is guaranteed by device characterization and is not production tested. AC TEST CONDITIONS PARAMETER CONDITIONS Input Pulse Levels 0.6V to 2.1V Input Rise and Fall Times 3.0 ns Input and Output Timing Reference Level 1.4V C L =30pF+1TTL Load(55ns/70ns) Output Load C L =100pF+1TTL Load(Load for 100ns) AC TEST LOADS AND WAVEFORM DQ Z 0 = 50 ohm 50 ohm 30 pF Vt =1.4V Fig.A * Including Scope and Jig Capacitance TTL C L * Fig.B Output Load Equivalent R L C L |
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