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ADP5350ACBZ-1-R7 Datenblatt(PDF) 27 Page - Analog Devices

Teilenummer ADP5350ACBZ-1-R7
Bauteilbeschribung  Advanced Battery Management PMIC with Inductive Boost LED and Three LDO Regulators
PDF  63 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
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ADP5350ACBZ-1-R7 Datenblatt(HTML) 27 Page - Analog Devices

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Data Sheet
ADP5350
Rev. B | Page 27 of 63
(typical) of operation current. In sleep mode, the battery SOC is
updated every 5 min and the battery instant current (IINS) is
updated every 37.5 sec, which reduces the current to typically
4 µA (see Table 15). The ADP5350 automatically switches from
sleep mode to active mode when the current through the
isolation FET is higher than typically 35 mA. The system
current must be less than 35 mA when switching to sleep mode.
Depending on the system load, the mode can be switched to
active mode to achieve better SOC accuracy.
Table 15. Fuel Gauge Operation Mode
Operation
Mode
Current
(Typical)
ADC Sample
Rate
SOC Update
Rate
Shutdown
0.2 µA
None
None
Sleep
4 µA
37.5 sec
5 min
Active
160 µA
0.125 sec
1 sec
Battery Voltage Compensation
The battery internal resistance impacts the accuracy of a
traditional voltage-based SOC. A higher load current translates
to a higher voltage drop (ΔVDROP) over the internal resistance,
RBAT (see Figure 44).
Figure 44. Discharge Current Sensing Through Battery Isolation FET
The ADP5350 uses the battery isolation FET for battery discharge
current sensing. The device senses the ISOS and ISOB node
voltages to obtain the delta voltage. Divide the delta voltage by
RDSON to achieve the discharge current, which can be used for
SOC calculation compensation.
The voltage reading from the BSNS pin is compensated using
the following equation and can be read in the VBAT_READ_H
and VBAT_READ_L registers.
VBAT = VBSNS + RBAT × IBAT
where:
VBSNS is the voltage on the BSNS pin.
RBAT is the internal resistance of the battery.
IBAT is the current through the battery.
When the battery is charging, IBAT is the charging current.
During the battery discharges, IBAT is calculated by the voltage
sense on the isolated FET.
The internal resistance of the battery has strong temperature
dependency. Figure 45 shows the internal resistance
temperature coefficient using a 280 mAh, 3.7 V Li-Ion cell
battery.
The ADP5350 contains I2C registers to calculate the RBAT value,
where the user can program the battery internal resistance
characterized from the battery at certain temperatures. The
ADP5350 uses this data to calculate the battery internal
resistance at different temperatures.
It is strongly recommended to use the I2C bits, BAT_TEMP, to
obtain an accurate battery temperature if the system has such
temperature sense information. If using the ADP5350 internal
sense circuitry as the temperature source, only four temperature
levels for battery resistance compensation are available, which
may cause errors in the SOC calculation relating to the battery
resistance temperature coefficient.
Figure 45. RBAT Temperature Coefficient vs. Battery Temperature,
Temperature Coefficient of the Li-Ion Battery, Relative to Battery RBAT at 25°C
In addition, the internal resistance of the battery has a remaining
capacity dependency, especially when the SOC is less than 20%.
The ADP5350 allows the user to program different internal
resistance coefficients when the SOC is in the 20% to 0% range
during a discharge by programming the corresponding bits,
K_RBAT_SOC (see Figure 46).
Figure 46. RBAT SOC Coefficient vs. Battery SOC,
SOC Coefficient of the Li-Ion Battery, Relative to Battery RBAT at 25°C
RDSON
ISOB
ISOS
TO SYSTEM
BATTERY RESISTANCE
ΔVDROP = RBAT × IBAT
+
–
3.0
0
0.5
1.5
2.5
1.0
2.0
0
10
20
30
40
BATTERY TEMPERATURE (°C)
10
5
0
0
100
BATTERY SOC (%)
20
40
60
80
1 × 20% SOC
2 × 20% SOC
4 × 20% SOC
8 × 20% SOC



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