ADP5350ACBZ-1-R7 datasheet(12/63 Pages) AD

12 / 63 page

ADP5350

Data Sheet

Rev. B | Page 12 of 63

ABSOLUTE MAXIMUM RATINGS

Table 7.

Parameter

Rating

VBUSA, VBUSB to PGND1

−0.5 V to +20 V

SW4, VOUT4, D1, D2, D3, D4, D5 to PGND4

−0.5 V to +20 V

FB4

−0.3 V to +6 V

CFL2 to AGND

−0.3 V to +3.3 V

PGND1, PGND4 to AGND

−0.3 V to +0.3 V

All Other Pins to AGND

−0.3 V to +6 V

Continuous Drain Current, Battery

Supplementary Mode, from ISOB to

ISOS, TJ = 125°C

1.1 A

Storage Temperature Range

−65°C to +150°C

Operating Junction Temperature Range

−40°C to +125°C

Soldering Conditions

JEDEC J-STD-020

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

THERMAL RESISTANCE

Thermal performance is directly linked to printed circuit board

(PCB) design and operating environment.

Careful attention to PCB thermal design is required. θJA is the

natural convection junction to ambient thermal resistance

measured in a one cubic foot sealed enclosure. θJC is the

junction to case thermal resistance.

Table 8. Thermal Resistance

Package Type

θJA

θJC

Unit

CP-32-121

2.1

°C/W

CB-32-1

0.7

°C/W

Thermal impedance simulated values are based on a JEDEC 2S2P thermal

test board with nine thermal vias. See JEDEC JESD51.

Maximum Power Dissipation

The maximum safe power dissipation in the ADP5350 package

is limited by the associated rise in junction temperature (TJ) on

the die. At approximately 150°C, which is the glass transition

temperature, the plastic changes its properties. Even temporarily

exceeding this temperature limit may change the stresses that

the package exerts on the die, permanently shifting the para-

metric performance of the ADP5350. Exceeding a junction

temperature of 175°C for an extended period of time can result

in changes in the silicon devices that potentially cause failure.

ESD CAUTION

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