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S80KS2563 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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S80KS2563 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
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1 / 53 page ![]() Datasheet Please read the Important Notice and Warnings at the end of this document 002-31339 Rev. *C www.infineon.com page 1 of 53 2021-09-27 S80KS2563 256 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V Features •Interface - xSPI (Octal) interface - 1.8 V interface support • Single ended clock (CK) - 11 bus signals • Optional differential clock (CK, CK#) - 12 bus signals - Chip select (CS#) - 8-bit data bus (DQ[7:0]) -Hardware reset (RESET#) - Bidirectional read-write data strobe (RWDS) • Output at the start of all transactions to indicate refresh latency • Output during read transactions as read data strobe • Input during write transactions as write data mask • Performance, power, and packages - 200 MHz maximum clock rate - DDR - transfers data on both edges of the clock - Data throughput up to 400 MBps (3,200 Mbps) - Configurable burst characteristics •Linear burst • Wrapped burst lengths: 16 bytes (8 clocks) 32 bytes (16 clocks) 64 bytes (32 clocks) 128 bytes (64 clocks) • Hybrid option - one wrapped burst followed by linear burst - Configurable output drive strength -Power modes • Hybrid sleep mode • Deep power down -Array refresh • Partial memory array (1/8, 1/4, 1/2, and so on) •Full -Package • 24-ball FBGA - Operating temperature range •Industrial (I): –40 °C to +85 °C • Industrial Plus (V): –40 °C to +105 °C • Automotive, AEC-Q100 Grade 3: –40 °C to +85 °C • Automotive, AEC-Q100 Grade 2: –40 °C to +105°C • Automotive, AEC-Q100 Grade 1: –40 °C to +125 °C • Technology • 25-nm DRAM |
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