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S80KS2563 Datenblatt(PDF) 20 Page - Infineon Technologies AG |
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S80KS2563 Datenblatt(HTML) 20 Page - Infineon Technologies AG |
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20 / 53 page ![]() Datasheet 20 of 53 002-31339 Rev. *C 2021-09-27 256 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V xSPI (Octal) transaction details 4.13 Data placement during register READ/WRITE transactions Data placement during register read/write is Big Endian. Table 5 Data placement during register READ/WRITE transactions Address space Byte order Byte position Worddata bit DQ Bit order Register Big- endian A 15 7 When data is being accessed in register space: During a read transaction on the xSPI (Octal) two bytes are transferred on each clock cycle. The upper order byte A (Word[15:8]) is transferred between the rising and falling edges of RWDS (edge-aligned). The lower order byte B (Word[7:0]) is transferred between the falling and rising edges of RWDS. During a write, the upper order byte A (Word[15:8]) is trans- ferred on the CK rising edge and the lower order byte B (Word[7:0]) is transferred on the CK falling edge. So, register space is always read and written in Big-endian order because registers have device dependent fixed bit location and meaning definitions. 14 6 13 5 12 4 11 3 10 2 91 80 B 77 66 55 44 33 22 11 00 |
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