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S80KS2563 Datenblatt(PDF) 20 Page - Infineon Technologies AG

Teilenummer S80KS2563
Bauteilbeschribung  256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V
PDF  53 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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002-31339 Rev. *C
2021-09-27
256 Mb: HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface
1.8 V
xSPI (Octal) transaction details
4.13
Data placement during register READ/WRITE transactions
Data placement during register read/write is Big Endian.
Table 5
Data placement during register READ/WRITE transactions
Address
space
Byte
order Byte position
Worddata
bit
DQ
Bit order
Register
Big-
endian
A
15
7
When data is being accessed in register space:
During a read transaction on the xSPI (Octal) two bytes are
transferred on each clock cycle. The upper order byte A
(Word[15:8]) is transferred between the rising and falling
edges of RWDS (edge-aligned). The lower order byte B
(Word[7:0]) is transferred between the falling and rising
edges of RWDS.
During a write, the upper order byte A (Word[15:8]) is trans-
ferred on the CK rising edge and the lower order byte B
(Word[7:0]) is transferred on the CK falling edge.
So, register space is always read and written in Big-endian
order because registers have device dependent fixed bit
location and meaning definitions.
14
6
13
5
12
4
11
3
10
2
91
80
B
77
66
55
44
33
22
11
00



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