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H30R1202 Datenblatt(PDF) 3 Page - Infineon Technologies AG

Teilenummer H30R1202
Bauteilbeschribung  Reverse Conducting IGBT with monolithic body diode
PDF  12 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R1202 Datenblatt(HTML) 3 Page - Infineon Technologies AG

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IHW30N120R2
Soft Switching Series
Power Semiconductors
3
Rev. 1.2
May 06
Dynamic Characteristic
Input capacitance
Ciss
-
2589
-
Output capacitance
Coss
-
77
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
62
-
pF
Gate charge
QGate
VCC=960V, IC=30A
VGE=15V
-
198
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
13
-
nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
Max.
Unit
IGBT Characteristic
Turn-off delay time
td(off)
-
792
-
Fall time
tf
-
33
-
Turn-on energy
Eon
-
-
-
Turn-off energy
Eoff
-
2.4
-
ns
Total switching energy
Ets
Tj=25°C,
VCC=600V,IC=30A
VGE=0 /15V,
RG=28Ω,
Lσ
2) =180nH,
Cσ
2) =39pF
-
2.4
-
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
Max.
Unit
IGBT Characteristic
Turn-off delay time
td(off)
-
860
-
Fall time
tf
-
40
-
Turn-on energy
Eon
-
-
-
Turn-off energy
Eoff
-
3.1
-
ns
Total switching energy
Ets
Tj=175°C
VCC=600V,IC=30A,
VGE= 0 /15V,
RG= 28Ω,
Lσ=180nH
2) ,
Cσ=39pF
2)
-
3.1
-
mJ
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.



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