H30R1202 datasheet(6/12 Pages) INFINEON

Teilenummer	H30R1202

Bauteilbeschribung	Reverse Conducting IGBT with monolithic body diode

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IHW30N120R2

Soft Switching Series

Power Semiconductors

Rev. 1.2

May 06

20A

30A

40A

50A

100ns

1000ns

d(off)

10Ω

20Ω

30Ω

40Ω

50Ω

60Ω

70Ω

100ns

1000ns

d(off)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load,

TJ=175°C,

VCE=600V, VGE=0/15V, RG=28Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load,

TJ=175°C, VCE=600V,

VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C

125°C

150°C

100ns

1000ns

d(off)

-50°C

0°C

50°C

100°C

max.

typ.

min.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load,

VCE=600V,

VGE=0/15V, IC=30A, RG=28Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as a

function of junction temperature

(

IC = 0.7mA)

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