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H30R1202 Datenblatt(PDF) 5 Page - Infineon Technologies AG

Teilenummer H30R1202
Bauteilbeschribung  Reverse Conducting IGBT with monolithic body diode
PDF  12 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R1202 Datenblatt(HTML) 5 Page - Infineon Technologies AG

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IHW30N120R2
Soft Switching Series
Power Semiconductors
5
Rev. 1.2
May 06
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE=20V
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(
Tj = 25°C)
Figure 6. Typical output characteristic
(
Tj = 175°C)
0V
2V
4V
6V
8V
10V
0A
10A
20A
30A
40A
50A
60A
70A
80A
25°C
T
J=175°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I
C=30A
I
C=60A
I
C=15A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter saturation
voltage as a function of junction
temperature
(
VGE =15V)



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