H30R1202 datasheet(1/12 Pages) INFINEON

Teilenummer	H30R1202

Bauteilbeschribung	Reverse Conducting IGBT with monolithic body diode

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Hersteller	INFINEON [Infineon Technologies AG]

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IHW30N120R2

Soft Switching Series

Power Semiconductors

1

Rev. 1.2

May 06

Reverse Conducting IGBT with monolithic body diode

Features:

•

Powerful monolithic Body Diode with very low forward voltage

•

Body diode clamps negative voltages

•

Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

•

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

•

Low EMI

•

Qualified according to JEDEC

1 for target applications

•

Pb-free lead plating; RoHS compliant

•

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

•

Inductive Cooking

•

Soft Switching Applications

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking

Package

IHW30N120R2

1200V

30A

1.65V

175

°C

H30R1202

PG-TO-247-3-21

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

V

DC collector current

TC = 25°C

TC = 100°C

IC

60

30

Pulsed collector current, tp limited by Tjmax

ICpul s

90

Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)

-

90

Diode forward current

TC = 25°C

TC = 100°C

IF

60

30

Diode pulsed current, tp limited by Tjmax

IFpul s

90

Diode surge non repetitive current, tp limited by Tjmax

TC = 25°C, tp = 10ms, sine halfwave

TC = 25°C, tp ≤ 2.5µs, sine halfwave

TC = 100°C, tp ≤ 2.5µs, sine halfwave

IFSM

50

130

120

A

Gate-emitter voltage

Transient Gate-emitter voltage (tp < 5 ms)

VGE

±20

±25

V

Power dissipation TC = 25°C

Ptot

390

W

Operating junction temperature

Tj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

°C

1 J-STD-020 and JESD-022

G

C

E

PG-TO-247-3-21

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