| Datenblatt-Suchmaschine für elektronische Bauteile |
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M500000013 Datenblatt(PDF) 61 Page - SPANSION |
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M500000013 Datenblatt(HTML) 61 Page - SPANSION |
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61 / 70 page ![]() 60 Am50DL9608G May 19, 2003 P R E L I M I NARY PSEUDO SRAM AC CHARACTERISTICS Power Up Time When powering up the SRAM, maintain V CCs for 100 µs minimum with CE#1s at VIH. Read Cycle Notes: 1. CE1#s = OE# = V IL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL 2. Do not access device with cycle timing shorter than t RC for continuous periods < 10 µs. Figure 28. Pseudo SRAM Read Cycle—Address Controlled Parameter Symbol Description Speed Unit 55 70 t RC Read Cycle Time Min 55 70 ns t AA Address Access Time Max 55 70 ns t CO1, tCO2 Chip Enable to Output Max 55 70 ns t OE Output Enable Access Time Max 30 35 ns t BA LB#s, UB#s to Access Time Max 55 70 ns t LZ1, tLZ2 Chip Enable (CE1#s Low and CE2s High) to Low-Z Output Min 5 ns t BLZ UB#, LB# Enable to Low-Z Output Min 5 ns t OLZ Output Enable to Low-Z Output Min 5 ns t HZ1, tHZ2 Chip Disable to High-Z Output Max 20 25 ns t BHZ UB#s, LB#s Disable to High-Z Output Max 20 25 ns t OHZ Output Disable to High-Z Output Max 20 25 ns t OH Output Data Hold from Address Change Min 10 ns Address Data Out Previous Data Valid Data Valid tAA tRC tOH |
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