M500000013 datasheet(68/70 Pages) SPANSION

68 / 70 page

May 19, 2003

Am50DL9608G

P R E L I M I NARY

REVISION SUMMARY

Revision A (October 7, 2002)

Initial release.

Revision A+1 (October 14, 2002)

Flash DC Characteristics

Added CMOS compatible table.

Revision A+2 (November 5, 2002)

Distinctive Characteristics

Added Pseudo SRAM access time.

Changed power dissipation standby from 70 µA maxi-

mum to 60 µA.

Changed wording from 1 million write cycles to 1 mil-

lion erase cycles.

Product Selector Guide

Removed the 85 ns speed options.

Added a 75 ns speed option.

Removed a f from CE# Access.

Special Package Handling Instructions

Modified wording.

Ordering Information

Modified order numbers and package markings to re-

flect new speed option.

Pseudo SRAM and Operating Characteristics

Changed the typical and maximum of the Average Op-

erating Current (I

CC1s and ICC2s).

Changed the maximum of the Standby Cu rrent

(CMOS) to 70 µA.

Customer Lockable: SecSi Sector NOT

Programmed or Protected at the factory.

Added second bullet, SecSi sector-protect verify text

and figure 3.

SecSi Sector Flash Memory Region, and Enter

SecSi Sector/Exit SecSi Sector Command

Sequence

Added notes, “Note that the ACC function and unlock

bypass modes are not available when the SecSi sector

is enabled.”

Byte/Word Program Command Sequence, Sector

Erase Command Sequence, and Chip Erase Com-

mand Sequence

Added “Note that the SecSi Sector, autoselect, and CFI

functions are unavailable when a [program/erase]

operation is in progress.”

Common Flash Memory Interface (CFI)

Changed wording in last sentence of third paragraph

from, “...the autoselect mode.” to “...reading array

data.”

Changed CFI website address.

Command Definitions

Changed wording in last sentence of first paragraph

from, “...resets the device to reading array data.” to

...”may place the device to an unknown state. A reset

command is then required to return the device to read-

ing array data.”

Table 12. Am29DL640G Command Definitions

Changed the first address of the unlock bypass reset

command sequence from BA to XXX.

CMOS Compatible

Added I

LR parameter to table.

Deleted I

ACC parameter from table.

Changed the maximums of I

CC3f, ICC4f, and ICC5f from

5 µA to 10 µA.

Added Note #6.

Pseudo SRAM DC and Operating Characteristics

Changed the test conditions and maximum for I

SB1

and added the I

SB2 parameter symbol.

Figure 12. Standby Current I

SB CMOS

Added figure.

Revision A+3 (January 2, 2003)

Pseudo SRAM AC Characteristics

Write Cycle table: Changed t

DW to 40 ns.

Physical Dimensions

Deleted A1 specification from table.

Revision A+4 (May 19, 2003)

pSRAM Data Retention, Figure 33. CE#1 Controlled

Data Retention Mode, and Figure 34. CE2s

Controlled Data Retention Mode

Removed table and figures from data sheet.

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