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BD9DA00MF

Datasheet

TSZ02201-0J2J0AB01940-1-2

18.Mar.2025 Rev.001

www.rohm.com

TSZ22111 • 15 • 001

Electrical Characteristics – continued

(Unless otherwise specified Tj = -40 °C to +125 °C, VIN = 12 V, VEN = 2 V)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Power Good

Power Good Rising

Threshold Voltage

VPGDTHGR

89.5

92.5

95.5

VFB rising,

VPGDTHGR = VFB / VREF x 100

Power Fault Rising

Threshold Voltage

VPGDTHFR

113

116

119

VFB rising,

VPGDTHFR = VFB / VREF x 100

Power Fault Falling

Threshold Voltage

VPGDTHFF

VFB falling,

VPGDTHFF = VFB / VREF x 100

PGD Low to High Delay Time

tDPGD

0.63

0.90

1.17

PGD Output Leakage Current

ILKPGD

µA

VPGD = 3.3 V

PGD MOSFET ON Resistance

RPGD

VCC = 3 V

PGD Clamp Voltage 1

VPGDCL1

600

VIN = 0 V, 100 kΩ pull up to

3.3 V, Tj = 25 °C

PGD Clamp Voltage 2

VPGDCL2

700

VIN = 0 V, 10 kΩ pull up to

3.3 V, Tj = 25 °C

Protection

OVP Threshold Voltage

VOVP

113

116

119

VOVP = VFB / VREF x 100

SCP Threshold Voltage

VSCP

VSCP = VFB / VREF x 100

Current Limit Threshold

VLIM

1.15

1.20

1.25

IILIM to IOUT Ratio(Note 1)

IILIM/IOUT

18.0

20.0

22.0

µA/A

4.7 kΩ ≤ RILIM ≤ 6.2 kΩ

16.4

20.0

23.2

6.2 kΩ < RILIM ≤ 10 kΩ

Low-Side FET Reverse Detection

Current(Note 1)

IROCP

6.5

(Note 1) This is design value. No tested on outgoing inspection

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