H30R1602 datasheet(7/12 Pages) INFINEON

Teilenummer	H30R1602

Bauteilbeschribung	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

PDF	12 Pages

Scroll/Zoom	100%

Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

7 / 12 page

IHW30N160R2

Soft Switching Series

Power Semiconductors

Rev. 2.1

Nov 09

10A

20A

30A

40A

50A

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJ

6.0mJ

7.0mJ

off

10Ω

20Ω

30Ω

40Ω

50Ω

60Ω

70Ω

80Ω

4.0mJ

5.0mJ

6.0mJ

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical turn-off energy as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=10Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical turn-off energy as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C 125°C 150°C

2.0mJ

2.5mJ

3.0mJ

3.5mJ

4.0mJ

off

600V

700V

800V

900V 1000V 1100V

4.0mJ

4.5mJ

5.0mJ

5.5mJ

6.0mJ

6.5mJ

7.0mJ

7.5mJ

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical turn-off energy as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=30A, RG=10Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical turn-off energy as a

function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=30A, RG=10Ω,

Dynamic test circuit in Figure E)

H30R1602 Datenblatt(PDF) 7 Page - Infineon Technologies AG

H30R1602 Datenblatt(HTML) 7 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL