H30R1602 datasheet(1/12 Pages) INFINEON

Teilenummer	H30R1602

Bauteilbeschribung	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

PDF	12 Pages

Scroll/Zoom	100%

Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

1 / 12 page

IHW30N160R2

Soft Switching Series

Power Semiconductors

1

Rev. 2.1

Nov 09

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Features:

•

Powerful monolithic Body Diode with very low forward voltage

•

Body diode clamps negative voltages

•

Trench and Fieldstop technology for 1600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

•

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

•

Low EMI

•

Qualified according to JEDEC

1 for target applications

•

Pb-free lead plating; RoHS compliant

•

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

•

Inductive Cooking

•

Soft Switching Applications

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking

Package

IHW30N160R2

1600V

30A

1.8V

175

°C

H30R1602

PG-TO-247-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1600

V

DC collector current

TC = 25

°C

TC = 100

°C

IC

60

30

Pulsed collector current, tp limited by Tjmax

ICpuls

90

Turn off safe operating area (VCE

≤ 1600V, Tj ≤ 175°C)

-

90

Diode forward current

TC = 25

°C

TC = 100

°C

IF

60

30

Diode pulsed current, tp limited by Tjmax

IFpuls

90

Diode surge non repetitive current, tp limited by Tjmax

TC = 25

°C, tp = 10ms, sine halfwave

TC = 25

°C, tp ≤ 2.5µs, sine halfwave

TC = 100

°C, tp ≤ 2.5µs, sine halfwave

IFSM

50

130

120

A

Gate-emitter voltage

Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)

VGE

±20

±25

V

Power dissipation TC = 25

°C

Ptot

312

W

Operating junction temperature

Tj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

°C

1 J-STD-020 and JESD-022

G

C

E

PG-TO-247-3

Ähnliche Beschreibung - H30R1602

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	IHW15N120R	370Kb / 12P	Reverse Conducting IGBT with monolithic body diode Rev. 2.1 July 06
	IHW15N120R3	790Kb / 12P	Reverse conducting IGBT with monolithic body diode Rev 2.2 2009-11-18
	IHY20N120R3	933Kb / 12P	Reverse conducting IGBT with monolithic body diode Rev 2.1 2009-11-25
	IHY30N160R2	615Kb / 12P	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode Rev. 2.1 Nov. 09
	IKW40N65WR5	1Mb / 15P	Reverse conducting IGBT with monolithic body diode Rev.1.2,2015-03-27
	IHW20N120R5	1Mb / 15P	Reverse Conducting IGBT with monolithic body diode Rev.2.1,2015-01-26
	IKW40N65WR5	1Mb / 15P	Reverse conducting IGBT with monolithic body diode Rev.2.1,2015-12-10
	IHW20N65R5	2Mb / 15P	Reverse conducting IGBT with monolithic body diode Rev.2.3,2015-12-22
	IHW40N120R5	1Mb / 15P	Reverse Conducting IGBT with monolithic body diode V2.3 2019-09-20
	IHW30N110R5	1Mb / 15P	Reverse-Conducting IGBT with monolithic body diode Revision 1.00 2022-05-18

More results

H30R1602 Datenblatt(PDF) 1 Page - Infineon Technologies AG

H30R1602 Datenblatt(HTML) 1 Page - Infineon Technologies AG

Ähnliche Teilenummer - H30R1602

Ähnliche Beschreibung - H30R1602

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL