H30R1602 datasheet(8/12 Pages) INFINEON

Teilenummer	H30R1602

Bauteilbeschribung	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

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IHW30N160R2

Soft Switching Series

Power Semiconductors

Rev. 2.1

Nov 09

0nC

25nC

50nC

75nC

100nC 125nC

10V

15V

1280V

320V

10V

20V

100pF

1nF

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QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC=30 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

10µs

100µs

1ms

10ms

100ms

-3K/W

-2K/W

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1µs

10µs

100µs

1ms

10ms 100ms

-2K/W

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH

Figure 19. IGBT transient thermal

resistance

(D = tp / T)

Figure 20. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

R ,(K/W)

τ , (s )

0.1385

5.49*10

-2

0.1354

7.70*10

-3

0.1176

6.83*10

-4

0.087

1.94*10

-5

C1=

τ1/R1

C2=

τ2/R2

R ,(K/W)

τ , (s )

0.2

1.51*10

-1

0.1514

1.14*10

-2

0.1284

8.98*10

-4

C1=

τ1/R1

C2=

τ2/R2

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