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H30R90 Datenblatt(PDF) 3 Page - Infineon Technologies AG

Teilenummer H30R90
Bauteilbeschribung  Reverse Conducting IGBT with monolithic body diode
PDF  12 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

H30R90 Datenblatt(HTML) 3 Page - Infineon Technologies AG

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IHW30N90R
Soft Switching Series
q
Power Semiconductors
3
Rev. 2.2 Nov 08
Dynamic Characteristic
Input capacitance
C iss
-
2889
-
Output capacitance
C oss
-
83
-
Reverse transfer capacitance
C rss
V CE =25V,
V GE =0V,
f
=1MHz
-
79
-
pF
Gate charge
Q Gate
V CC =720V, IC =30A
V GE =15V
-
200
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L E
-
13
-
nH
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
Max.
Unit
IGBT Characteristic
Turn-off delay time
t d(off)
-
511
-
Fall time
t f
-
24
-
Turn-on energy
E on
-
-
-
Turn-off energy
E off
-
1.46
-
Total switching energy
E ts
T j=25°C
V CC =600V,
I C =30A,
V GE =0/15V,
R G= 15Ω
-
1.46
-
mJ
Switching Characteristic, Inductive Load,
at Tj=175 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-off delay time
t d(off)
-
594
-
Fall time
t f
-
46
-
Turn-on energy
E on
-
-
-
Turn-off energy
E off
-
2.1
-
Total switching energy
E ts
T j= 175 °C
V CC =600V,
I C =30A,
V GE =0/15V,
R G= 15Ω
-
2.1
-
mJ



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