H30R90 datasheet(7/12 Pages) INFINEON

Teilenummer	H30R90

Bauteilbeschribung	Reverse Conducting IGBT with monolithic body diode

PDF	12 Pages

Scroll/Zoom	100%

Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

7 / 12 page

IHW30N90R

Soft Switching Series

Power Semiconductors

Rev. 2.2 Nov 08

10A

20A

30A

40A

50A

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

off

20Ω

30Ω

40Ω

0.0mJ

1.0mJ

2.0mJ

3.0mJ

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=15Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C 125°C 150°C

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

off

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=30A, RG=15Ω,

Dynamic test circuit in Figure E)

H30R90 Datenblatt(PDF) 7 Page - Infineon Technologies AG

H30R90 Datenblatt(HTML) 7 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL