H30R90 datasheet(1/12 Pages) INFINEON

Teilenummer	H30R90

Bauteilbeschribung	Reverse Conducting IGBT with monolithic body diode

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Hersteller	INFINEON [Infineon Technologies AG]

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IHW30N90R

Soft Switching Series

q

Power Semiconductors

1

Rev. 2.2 Nov 08

Reverse Conducting IGBT with monolithic body diode

Features:

•

1.5V typical saturation voltage of IGBT

•

Trench and Fieldstop technology for 900 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive

temperature coefficient in VCE(sat)

•

Low EMI

•

Qualified according to JEDEC

1 for target applications

•

Application specific optimisation of inverse diode

•

Pb-free lead plating; RoHS compliant

Applications:

•

Microwave Oven

•

Soft Switching Applications for ZCS

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking

Package

IHW30N90R

900V

30A

1.5V

175

°C

H30R90

PG-TO-247-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V CE

900

V

DC collector current

TC = 25°C

TC = 100°C

I C

60

30

Pulsed collector current, tp limited by Tjmax

I Cpuls

90

Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C

-

90

Diode forward current

TC = 25°C

TC = 100°C

I F

60

30

Diode pulsed current, tp limited by Tjmax

I Fpuls

90

A

Gate-emitter voltage

Transient Gate-emitter voltage (tp < 5 ms)

V GE

±20

±25

V

Power dissipation, TC = 25°C

P tot

454

W

Operating junction temperature

T j

-40...+175

°C

Storage temperature

T stg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

°C

1 J-STD-020 and JESD-022

G

C

E

PG-TO-247-3

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