H30R90 datasheet(2/12 Pages) INFINEON

Teilenummer	H30R90

Bauteilbeschribung	Reverse Conducting IGBT with monolithic body diode

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IHW30N90R

Soft Switching Series

Power Semiconductors

Rev. 2.2 Nov 08

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R thJC

0.33

Diode thermal resistance,

junction – case

R thJC D

0.33

Thermal resistance,

junction – ambient

R thJA

K/W

Electrical Characteristic,

at Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V (BR)CES VGE =0V, IC=0.5mA

900

Collector-emitter saturation voltage

V CE(sat)

V GE = 15 V, IC =30A

T j=25°C

T j= 150 °C

T j= 175 °C

1.5

1.6

1.7

Diode forward voltage

V F

V GE =0V, IF=30A

T j=25°C

T j= 150 °C

T j= 175 °C

1.4

1.45

1.6

Gate-emitter threshold voltage

V GE(th)

I C =700 μA,VCE =VGE

5.1

5.8

6.4

Zero gate voltage collector current

I CES

V CE =900V,

V GE =0V

T j=25°C

T j= 150 °C

2500

μA

Gate-emitter leakage current

I GES

V CE =0V,VGE =20V

600

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