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LT1680ISW Datenblatt(PDF) 3 Page - Linear Technology |
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LT1680ISW Datenblatt(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() 3 LT1680 ELECTRICAL CHARACTERISTICS 12VIN = 12V, VVC = 2V, VFB = VREF = 1.25V, CGATE = 3000pF, TA = 25°C unless otherwise noted. Note 2: Supply current specification does not include external FET gate charge currents. Actual supply currents will be higher and vary with operating frequency, operating voltages and the type of external FETs used. See Applications Information. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Error Amplifier VSENSE Peak Current Limit Threshold Measured at Sense Inputs q 170 190 mV Average Current Limit Threshold Measured at Sense Inputs, VCMSENSE = 10V q 110 120 130 mV VIAVG Average Current Limit Threshold Measured at IAVG Pin 2.5 V Current Sense Amplifier AV Amplifier DC Gain Measured at IAVG Pin 15 V/V VOS Amplifier Input Offset Voltage 2V < VCMSENSE < 60V, q 0.1 mV SENSE+ – SENSE– = 5mV IBIAS Input Bias Current Sink (VCMSENSE > 5V) q 45 75 µA Source (VCMSENSE = 0V) q 700 1200 µA Oscillator fO Operating Frequency, Free Run q 200 kHz Frequency Programming Error fO ≤ 200kHz, RCT = 16.9k, CCT = 1000pF q –5 5 % ICT Timing Capacitor Discharge Current LT1680C q 2.20 2.5 2.75 mA LT1680I q 2.10 2.5 2.75 mA VSYNC SYNC Input Threshold Rising Edge q 0.8 2.0 V fSYNC SYNC Frequency Range fSYNC ≤ 200kHz q fO 1.4fO Output Drivers VGATE Undervoltage Output Clamp 12VIN ≤ 8.2V q 0.4 0.7 V Standby Mode Output Clamp VRUN < 0.5V q 0.1 V Gate Output On Voltage q 11 11.9 12 V Gate Output Off Voltage q 0.4 0.7 V tGATER Gate Output Rise Time q 60 200 ns tGATEF Gate Output Fall Time q 60 140 ns The q denotes specifications which apply over the full operating temperature range. Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. |
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