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LTC1154 Datenblatt(PDF) 8 Page - Linear Technology

Teilenummer LTC1154
Bauteilbeschribung  High-Side Micropower MOSFET Driver
PDF  16 Pages
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Hersteller  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC1154 Datenblatt(HTML) 8 Page - Linear Technology

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LTC1154
been set to minimize RFI and EMI emissions in normal
operation. If a short-circuit or current overload condition
is encountered, the gate is discharged very quickly (typi-
cally a few microseconds) by a large N-channel transistor.
Status Output Driver
The status circuitry continuously monitors the fault detec-
tion logic. This open-drain output is driven low when the
gate of the MOSFET is driven low by the protection
circuitry. The status circuitry is reset along with the input
latch when the input, or ENABLE input, is cycled.
MOSFET and Load Protection
The LTC1154 protects the power MOSFET switch by
removing drive from the gate as soon as an over-current
condition is detected. Resistive and inductive loads can be
protected with no external time delay in series with the
drain sense pin. Lamp loads, however, require that the
over-current protection by delayed long enough to start
the lamp but short enough to ensure the safety of the
MOSFET.
Resistive Loads
Loads that are primarily resistive should be protected with
as short a delay as possible to minimize the amount of time
that the MOSFET is subjected to an overload condition.
The drain sense circuitry has a built-in delay of approxi-
mately 10
µs to eliminate false triggering by power supply
or load transient conditions. This delay is sufficient to
“mask” short load current transients and the starting of a
small capacitor (<1
µF) in parallel with the load. The drain
sense pin can therefore be connected directly to the drain
current sense resistor as shown in Figure 1.
Inductive Loads
Loads that are primarily inductive, such as relays, sole-
noids and stepper motor windings should be protected
with as short a delay as possible to minimize the amount
of time that the MOSFET is subjected to an overload
condition. The built-in 10
µsdelaywillensurethattheover-
current protection is not false-triggered by a supply or
load transient. No external delay components are required
as shown in Figure 2.
Large inductive loads (>0.1mH) may require diodes con-
nected directly across the inductor to safely divert the
S
APPLICATI
I FOR ATIO
LTC1154 OPERATIO
stored energy to ground. Many inductive loads have these
diodes included. If not, a diode of the proper current rating
should be connected across the load, as shown in Figure
2, to safely divert the stored energy.
Figure 2. Protecting Inductive Loads
+
100
µF
IRFZ24
15V
RLOAD
12
12V
CLOAD ≤ 1µF
0.036
LTC1154 • F01
IN
EN
STATUS
GND
VS
DS
G
SD
LTC1154
Figure 1. Protecting Resistive Loads
IN
EN
STATUS
GND
VS
DS
G
SD
LTC1154
+
100
µF
IRFZ24
15V
12V, 1A
SOLENOID
12V
1N5400
0.036
LTC1154 • F02



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