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LTC1154 Datenblatt(PDF) 7 Page - Linear Technology |
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LTC1154 Datenblatt(HTML) 7 Page - Linear Technology |
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7 / 16 page ![]() 7 LTC1154 The LTC1154 is a single micropower MOSFET driver with built-in protection, status feedback and gate charge pump. The LTC1154 consists of the following functional blocks: TTL and CMOS Compatible Inputs The LTC1154 input and shutdown input have been de- signed to accommodate a wide range of logic families. Both input thresholds are set at about 1.3V with approxi- mately 100mV of hysteresis. A low standby current voltage regulator provides continu- ous bias for the TTL-to-CMOS converter. The TTL-to- CMOS converter output enables the rest of the circuitry. In this way the power consumption is kept to a minimum in the standby mode. ENABLE Input The ENABLE input is CMOS compatible and inhibits the input signal whenever it is held logic high. This input should be grounded when not in use. Internal Voltage Regulation The output of the TTL-to-CMOS converter drives two regulated supplies which power the low voltage CMOS logic and analog blocks. The regulator outputs are isolated from each other so that the noise generated by the charge TRUTH TABLE The Truth Table demonstrates how the LTC1154 receives inputs and returns status information to the µP. The ENABLE and input signal from the µP controls the switch in its normal operating mode, where the rise and fall time of the gate drive are controlled to limit EMI and RFI emissions. The shutdown and over-current detection cir- cuitry however, switch the gate off at a much higher rate to limit the exposure of the MOSFET switch and the load to dangerous conditions. The status pin remains high as long as the switch is operating normally, and is driven low only when a fault condition is detected. Note that the shutdown pin is edge-sensitive and latches the output off even if the shutdown pin returns to a low state. LTC1154 OPERATIO pump logic is not coupled into the 100mV reference or the analog comparator. Gate Charge Pump Gate drive for the MOSFET switch is produced by an adaptive charge pump circuit which generates a gate voltage substantially higher than the power supply volt- age. The charge pump capacitors are included on chip and therefore no external components are required to generate the gate drive. Drain Current Sense The LTC1154 is configured to sense the current flowing into the drain of the power MOSFET in a high-side applica- tion. An internal 100mV reference is compared to the drop across a sense resistor (typically 0.002 Ω to 0.10Ω) in series with the drain lead. If the drop across this resistor exceeds the internal 100mV threshold, the input latch is reset and the gate is quickly discharged via a large N-channel transistor. Controlled Gate Rise and Fall Times When the input is switched ON and OFF, the gate is charged by the internal charge pump and discharged in a controlled manner. The charge and discharge rates have IN X L H H H EN H X L L L SD X X L L GATE L L H L L STATUS H H H L L SWITCH OFF SWITCH OFF SWITCH ON SWITCH LATCHED OFF (OVER CURRENT) SWITCH LATCHED OFF (SHUTDOWN) INPUTS OUTPUTS SWITCH CONDITION L = LOGIC LOW H = LOGIC HIGH X = IRRELEVANT = EDGE TRIGGERED |
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