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LTC1154 Datenblatt(PDF) 9 Page - Linear Technology

Teilenummer LTC1154
Bauteilbeschribung  High-Side Micropower MOSFET Driver
PDF  16 Pages
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Hersteller  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC1154 Datenblatt(HTML) 9 Page - Linear Technology

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LTC1154
Capacitive Loads
Large capacitive loads, such as complex electrical sys-
tems with large bypass capacitors, should be powered
using the circuit shown in Figure 3. The gate drive to the
power MOSFET is passed through an RC delay network,
R1 and C1, which greatly reduces the turn-on ramp rate of
the switch. And since the MOSFET source voltage follows
the gate voltage, the load is powered smoothly and slowly
from ground. This dramatically reduces the start-up cur-
rent flowing into the supply capacitor(s) which, in turn,
reduces supply transients and allows for slower activation
of sensitive electrical loads. (Diode, D1, provides a direct
path for the LTC1154 protection circuitry to quickly dis-
charge the gate in the event of an over-current condition).
S
APPLICATI
I FOR ATIO
Lamp Loads
The in-rush current created by a lamp during turn-on can
be 10 to 20 times greater than the rated operating current.
The circuit shown in Figure 4 shifts the current limit
threshold up by a factor of 11:1 (to 30A) for 100ms when
the bulb is first turned on. The current limit then drops
down to 2.7A after the in-rush current has subsided.
Figure 3. Powering Large Capacitive Loads
The RC network, RD and CD, in series with the drain sense
input should be set to trip based on the expected charac-
teristics of the load
after start-up. With this circuit, it is
possible to power a large capacitive load and still react
quickly to an over-current condition. The ramp rate at the
output of the switch as it lifts off ground is approximately:
dV/dt = (VGATE – VTH)/(R1 × C1)
And therefore the current flowing into the capacitor during
start-up is approximately:
ISTART-UP = CLOAD × dV/dt
Using the values shown in Figure 3, the start-up current is
less than 100mA and does not false-trigger the drain
sense circuitry which is set at 2.7A with a 1ms delay.
Figure 5. Over-Current Shutdown Time vs MOSFET Current
MOSFET CURRENT (1 = SET CURRENT)
1
0.01
10
10
100
LTC1154 • F05
1
0.1
Selecting RD and CD
Figure 5 is a graph of normalized over-current shutdown
time versus normalized MOSFET current. This graph is
used to select the two delay components, RD and CD,
which make up a simple RC delay between the drain sense
resistor and the drain sense input.
Figure 4. Lamp Driver with Delayed Protection
IN
EN
STATUS
GND
VS
DS
G
SD
LTC1154
+
470
µF
MTP3055E
15V
12V
0.036
LTC1154 • F03
CD
0.01
µF
RD
100k
R1
100k
R2
100k
D1
1N4148
C1
0.33
µF
+
CLOAD
100
µF
OUT
IN
EN
STATUS
GND
VS
DS
G
SD
LTC1154
+
470
µF
MTP3055EL
9.1V
12V
0.036
LTC1154 • F04
10k
1M
0.1
µF
VN2222LL
100k
12V/1A
BULB



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