L9660 datasheet(14/49 Pages) STMICROELECTRONICS

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Electrical specifications

L9660

14/49

DocID024714 Rev 2

VFENLO

Input low voltage threshold

0.8

VFENHI

Input high voltage threshold

2.0

TFENLATCH

FEN Latch timer

512

tFLACC

FEN latch timer

accuracy

- 20%

Deployment drivers

TRESOLUTION Diagnostic timing / resolution IHS  IMEAS,

 T

MEASURE_TIME 

3.7ms

CSQUIB _HI = 0.12µF

CSQUIB _LO = 0.12µF

22.5

27.5

µs

TACCURACY

Diagnostic time

accuracy

LSB

IMEAS

High side driver current limit

detect threshold

Guaranteed by design

IHSX x

0.90

IHSX x

0.99

RDSonTOTAL

Total high and low side MOS

on resistance

High side MOS +

low side MOS D9:D8=”11”;

VRES = 7V; I = 1.6A @95°C

2.0



RDSonHS

High side MOS on resistance D9:D8=”11”; VRES = 7V;

Tamb = 95°C; IVRES = 1.6A;

-0.3

0.8



RDSonLS

Low side MOS on resistance

0.6

1.2



IHS_12A

High side deployment current

limit

Configuration mode 1 bits

D9:D8=”00” SQHx shorted

to ground;

VRES = 7 to 37V

1.21

1.47

IHS_15A

Configuration Mode 1 bits

D9:D8=”01” SQHx shorted

to ground;

VRES = 7 to 25V

1.51

1.85

IHS_175A

Configuration Mode 1 bits

D9:D8=”11” SQHx shorted

to ground;

VRES = 7 to 37V

1.76

2.14

tILIM

Low side MOS shutdown

under short to battery

Vsqblo=18V

110

µs

ILS

Low side MOS current limit

2.2

4.0

tsettle

Firing current settling time

Time from fire command

CS_D rising edge to where

firing current remains within

specified limits

CSQUIB _HI = 0 to 0.12µF

CSQUIB _LO = 0 to 0.12µF

150

µs

Table 7. Squib deployment drivers and diagnostics - DC electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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