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AT25SL128A Datenblatt(PDF) 33 Page - Dialog Semiconductor

Teilenummer AT25SL128A
Bauteilbeschribung  128-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
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AT25SL128A
DS-AT25SL128A–109K–02/2019
Figure 7-25. Quad Page Program Instruction (QPI mode)
7.17
4KB Block Erase (20h)
The Block Erase instruction is to erase the data of the selected block as being “1”. The instruction is used for 4K-byte
block. Prior to the Block Erase Instruction, the Write Enable instruction must be issued. The instruction is initiated by
driving the CS pin low and shifting the instruction code “20h” followed a 24-bit block address (A23-A0). (Please refer to
Figure 7-26 and Figure 7-27). The CS pin must go high after the eighth bit of the last byte has been latched in,
otherwise, the Block Erase instruction will not be executed. After CS goes high, the self-timed Block Erase instruction will
commence for a time duration of tSE (See AC Characteristics).
While the Block Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable Latch (WEL)
bit in the Status Register is cleared to 0.
Figure 7-26. Block Erase Instruction (SPI Mode)



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