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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AT25SL321 Datenblatt(PDF) 73 Page - Dialog Semiconductor |
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AT25SL321 Datenblatt(HTML) 73 Page - Dialog Semiconductor |
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73 / 82 page  72 AT25SL321 DS-25SL321–112H–2020-10 Notes: 1. Clock high + Clock low must be less than or equal to 1/fc. 2. Value guaranteed by design and/or characterization, not 100% tested in production. 3. Contains: Read Status Register-1,2/ Read Manufacturer/Device ID, Dual, Quad/ Read JEDEC ID/ Read Security Register/ Read Serial Flash Discovery Parameter. 4. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1. Output Disable Time tSHQZ 2 tDIS 7 ns Clock Low to Output Valid tCLQV tV1 7 ns Clock Low to Output Valid ( Except Main Read ) (3) tCLQV tV2 8 ns Output Hold Time tCLQX tHO 1.5 ns HOLD Active Setup Time relative to Clock tHLCH 5 ns HOLD Active Hold Time relative to Clock tCHHH 5 ns HOLD Not Active Setup Time relative to Clock tHHCH 5 ns HOLD Not Active Hold Time relative to Clock tCHHL 5 ns HOLD to Output Low-Z tHHQX 2 tLZ 7 ns HOLD to Output High-Z tHLQZ 2 tHZ 12 ns Write Protect Setup Time Before CS Low tWHSL 4 20 ns Write Protect Setup Time After CS High tSHWL 4 100 ns CS High to Power Down Mode tDP 2 3 µs CS High to Standby Mode without Electronic Signature Read tRES1 2 3 µs CS High to Standby Mode with Electronic Signature Read tRES2 2 1.8 µs CS High to next Instruction after Suspend tSUS 2 30 µs CS High to next Instruction after Reset tRST 2 30 µs Write Status Register Time tw 10 15 ms Byte Program Time tBP 10 150 µs Page Program Time tPP 0.6 5 ms Page Program Time (ACC = 9V) tEP 0.3 3 ms Block Erase Time (4 kB) tSE 0.06 0.4 s Block Erase Time (32 kB) tBE1 0.20 1.5 s Block Erase Time (64 kB) tBE2 0.35 2 s Chip Erase Time tCE 20 80 s 9.8 AC Electrical Characteristics (continued) Parameter Symbol Alt Min Typ Max Units |
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