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MCF5373CAB180 Datenblatt(PDF) 15 Page - Freescale Semiconductor, Inc |
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MCF5373CAB180 Datenblatt(HTML) 15 Page - Freescale Semiconductor, Inc |
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15 / 42 page ![]() Preliminary Electrical Characteristics MCF5373 ColdFire® Microprocessor Data Sheet, Rev. 0.3 Preliminary Freescale Semiconductor 15 5.2 Thermal Characteristics The average chip-junction temperature (TJ) in °C can be obtained from: Eqn. 1 Where: TA = Ambient Temperature, °C QJMA = Package Thermal Resistance, Junction-to-Ambient, °C/W PD =PINT + PI/O PINT =IDD × IVDD, Watts - Chip Internal Power PI/O = Power Dissipation on Input and Output Pins — User Determined 5 Power supply must maintain regulation within operating EVDD range during instantaneous and operating maximum current conditions. If positive injection current (Vin > EVDD) is greater than IDD, the injection current may flow out of EVDD and could result in external power supply going out of regulation. Insure external EVDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power (ex; no clock). Power supply must maintain regulation within operating EVDD range during instantaneous and operating maximum current conditions. Table 5. Thermal Characteristics Characteristic Symbol 256MBGA 196MBGA 160QFP Unit Junction to ambient, natural convection Four layer board (2s2p) θ JMA 261,2 NOTES: 1 θ JMA and Ψjt parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale recommends the use of θ JmA and power dissipation specifications in the system design to prevent device junction temperatures from exceeding the rated specification. System designers should be aware that device junction temperatures can be significantly influenced by board layout and surrounding devices. Conformance to the device junction temperature specification can be verified by physical measurement in the customer’s system using the Ψ jt parameter, the device power dissipation, and the method described in EIA/JESD Standard 51-2. 2 Per JEDEC JESD51-6 with the board horizontal. 321,2 401,2 °C/W Junction to ambient (@200 ft/min) Four layer board (2s2p) θ JMA 231,2 291,2 361,2 °C/W Junction to board θ JB 153 3 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 203 253 °C/W Junction to case θ JC 104 4 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). 104 104 °C/W Junction to top of package Ψ jt 21,5 5 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance with Psi-JT. 21,5 21,5 °C/W Maximum operating junction temperature Tj 105 105 105 oC TJ TA PD ΘJMA × () + = |
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