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ADIS16209/PCBZ Datenblatt(PDF) 4 Page - Analog Devices

Teilenummer ADIS16209/PCBZ
Bauteilbeschribung  High-Accuracy, Dual-Axis Digital Inclinometer and Accelerometer
PDF  16 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
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ADIS16209/PCBZ Datenblatt(HTML) 4 Page - Analog Devices

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ADIS16209
Preliminary Technical Data
Rev. PrA | Page 4 of 16
Parameter
Conditions
Min
Typ
Max
Unit
ON-CHIP VOLTAGE REFERENCE
2.5
V
Accuracy
At 25°C
−10
+10
mV
Reference Temperature Coefficient
±40
ppm/oC
Output Impedance
70
Ω
DAC OUTPUT
5 kΩ/100 pF to GND
Resolution
12
Bits
Relative Accuracy
For Code 101 to Code 4095
4
LSB
Differential Nonlinearity
1
LSB
Offset Error
±5
mV
Gain Error
±0.5
%
Output Range
0 to
2.5
V
Output Impedance
2
Ω
Output Settling Time
10
μs
LOGIC INPUTS
Input High Voltage, VINH
2.0
V
Input Low Voltage, VINL
0.8
V
For CS signal when used to wake up from sleep
mode
0.55
V
Logic 1 Input High Current, IINH
VIH = 3.3 V
±0.2
±10
μA
Logic 0 Input Low Current, IINL
VIL = 0 V
All except RST
−40
−60
μA
RST3
−1
mA
Input Capacitance, CIN
10
pF
DIGITAL OUTPUTS
Output High Voltage, VOH
ISOURCE = 1.6 mA
2.4
V
Output Low Voltage, VOL
ISINK = 1.6 mA
0.4
V
SLEEP TIMER
Timeout Period4
0.5
128
Seconds
START-UP TIME
Initial
130
ms
Sleep Mode Recovery
2.5
ms
FLASH MEMORY
Endurance5
20,000
Cycles
Data Retention6
TJ = 85°C
20
Years
CONVERSION RATE
Maximum Throughput Rate
4096
SPS
Minimum Throughput Rate
2.066
SPS
POWER SUPPLY
Operating Voltage Range
3.0
3.3
3.6
V
Power Supply Current
Normal mode, SMPL_PRD ≥ 0x08, 25°C
11
14
mA
Fast mode, SMPL_PRD ≤ 0x07, 25°C
36
42
mA
Sleep mode, at 25°C
500
750
μA
1 Guaranteed by iMEMS® packaged part testing, design, and/or characterization.
2 Self-test response changes as the square of VDD.
3 The RST pin has an internal pull-up.
4 Guaranteed by design.
5 Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C.
6 Retention lifetime equivalent at junction temperature (TJ) 55°C as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature.



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