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ADIS16209/PCBZ Datenblatt(PDF) 4 Page - Analog Devices |
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ADIS16209/PCBZ Datenblatt(HTML) 4 Page - Analog Devices |
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4 / 16 page ![]() ADIS16209 Preliminary Technical Data Rev. PrA | Page 4 of 16 Parameter Conditions Min Typ Max Unit ON-CHIP VOLTAGE REFERENCE 2.5 V Accuracy At 25°C −10 +10 mV Reference Temperature Coefficient ±40 ppm/oC Output Impedance 70 Ω DAC OUTPUT 5 kΩ/100 pF to GND Resolution 12 Bits Relative Accuracy For Code 101 to Code 4095 4 LSB Differential Nonlinearity 1 LSB Offset Error ±5 mV Gain Error ±0.5 % Output Range 0 to 2.5 V Output Impedance 2 Ω Output Settling Time 10 μs LOGIC INPUTS Input High Voltage, VINH 2.0 V Input Low Voltage, VINL 0.8 V For CS signal when used to wake up from sleep mode 0.55 V Logic 1 Input High Current, IINH VIH = 3.3 V ±0.2 ±10 μA Logic 0 Input Low Current, IINL VIL = 0 V All except RST −40 −60 μA RST3 −1 mA Input Capacitance, CIN 10 pF DIGITAL OUTPUTS Output High Voltage, VOH ISOURCE = 1.6 mA 2.4 V Output Low Voltage, VOL ISINK = 1.6 mA 0.4 V SLEEP TIMER Timeout Period4 0.5 128 Seconds START-UP TIME Initial 130 ms Sleep Mode Recovery 2.5 ms FLASH MEMORY Endurance5 20,000 Cycles Data Retention6 TJ = 85°C 20 Years CONVERSION RATE Maximum Throughput Rate 4096 SPS Minimum Throughput Rate 2.066 SPS POWER SUPPLY Operating Voltage Range 3.0 3.3 3.6 V Power Supply Current Normal mode, SMPL_PRD ≥ 0x08, 25°C 11 14 mA Fast mode, SMPL_PRD ≤ 0x07, 25°C 36 42 mA Sleep mode, at 25°C 500 750 μA 1 Guaranteed by iMEMS® packaged part testing, design, and/or characterization. 2 Self-test response changes as the square of VDD. 3 The RST pin has an internal pull-up. 4 Guaranteed by design. 5 Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C. 6 Retention lifetime equivalent at junction temperature (TJ) 55°C as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature. |
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