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LP5523 Datenblatt(PDF) 5 Page - Texas Instruments

Teilenummer LP5523
Bauteilbeschribung  LP5523 Nine-Channel RGB- and White-LED Driver With Internal Program Memory and Integrated Charge PumpDSBGA Package
PDF  61 Pages
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Hersteller  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

LP5523 Datenblatt(HTML) 5 Page - Texas Instruments

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LP5523
www.ti.com
SNVS550E – SEPTEMBER 2009 – REVISED JANUARY 2017
Product Folder Links: LP5523
Submit Documentation Feedback
Copyright © 2009–2017, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2)
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design.
6.4 Thermal Information
THERMAL METRIC(1)
LP5523
UNIT
YFQ (DSBGA)
25 PINS
RθJA
(2)
Junction-to-ambient thermal resistance
60.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
0.4
°C/W
RθJB
Junction-to-board thermal resistance
9.9
°C/W
ψJT
Junction-to-top characterization parameter
0.2
°C/W
ψJB
Junction-to-board characterization parameter
10.0
°C/W
(1)
The Electrical Characteristics tables list ensured specifications under Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics conditions and/or notes. Typical specifications are estimations only and are not ensured.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
Minimum and maximum limits are ensured by design, test, or statistical analysis.
(4)
Low-ESR surface-mount ceramic capacitors (MLCCs) used in setting electrical characteristics.
6.5 Electrical Characteristics
Unless otherwise noted: typical limits are for TA = 25°C; minimum and maximum limits apply over the operating ambient
temperature range (
−30°C < TA < +85°C), specifications apply to the Functional Block Diagram with: VDD = 3.6 V, VEN = 1.65
V, COUT = 1 µF, CIN = 1 µF, C1–2 = 0.47 µF.
(1) (2) (3) (4)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IVDD
Standby supply current
VEN = 0V, CHIP_EN=0 (bit),
external 32-kHz clock running or not
running
0.2
µA
CHIP_EN=0 (bit), external 32 kHz
clock not running
1
µA
CHIP_EN=0 (bit), external 32 kHz
clock running
1.4
µA
Normal mode supply current
External 32-kHz clock running,
charge pump and current source
outputs disabled
0.6
mA
Charge pump in 1× mode, no load,
current source outputs disabled
0.8
mA
Charge pump in 1.5× mode, no
load, current source outputs
disabled
1.8
mA
Power-save mode supply current
External 32-kHz clock running
10
µA
Internal oscillator running
0.6
mA
ƒOSC
Internal oscillator frequency accuracy
–4%
4%
–7%
7%



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