L9663 datasheet(89/106 Pages) STMICROELECTRONICS

89 / 106 page

DS11401 Rev 6

89/106

L9663

Electrical characteristics

105

Table 12. VAS supply

Symbol

Parameter / Condition

Min

Typ

Max

Unit

VAS

Supply voltage VAS normal operation (Test info)

4.3

–

VAS,rip

Max. voltage ripple on VAS (1) (Test info)

1. This voltage ripple, that will anyhow not exceed minimum VAS voltage value, does not lead to corrupted

data reception.

-1.5

–

SR_VAS,rip

Slew rate of the voltage ripple on VAS

(Test info)

––

mV/µs

I_VAS,eff

Effective current for VAS: (Design info)

2 * 60 mA (effective for 45 mA supply current;

30mA data current)

+ 5mA current for all included Transceiver blocks

supplied from VAS.

––

125

I_VAS,peak

Dynamic current for VAS: (Design info)

1 * 75 mA (45 mA supply current; 30mA data

current)

+ 130 mA (STG on 2nd IF)

+ 5 mA current for all included Transceiver blocks

supplied from VAS.

––

210

Table 13. VAS external MOS

Symbol

Parameter / Condition(1)

1. Main parameters for choice of external component.

Min

Typ

Max

Unit

Vgs_ext

Gate to Source voltage (Test info)

-20

–

Vgsth_ext

Gate threshold voltage, with VDS = VGS,

ID = 250 µA (Test info)

1–

2.5

Vgl_ext

Gate leakage current at VGS = 20 V, VDS = 0 V

(Test info)

-10

–

µA

Rdson_ext

Drain to Source on state resistance at

VGS = 4.5 V, ID = 2.6 A (Test info)

––

150

mΩ

Ciss_ext

Input Capacitance at VGS=0V, VDS=25V f=1MHz

(Test info)

–

1100

Coss_ext

Output Capacitance at VGS=0V, VDS=25V

f=1MHz (Test info)

––

170

tdon_ext

Turn on delay time at VDS=30V, VGS=4.5V,

ID=2.6A, RG=16Ω (Test info)

–

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