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NVT2004TL Datenblatt(PDF) 12 Page - NXP Semiconductors |
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NVT2004TL Datenblatt(HTML) 12 Page - NXP Semiconductors |
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12 / 33 page ![]() NVT2003_04_06 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 5 — 19 February 2014 12 of 33 NXP Semiconductors NVT2003/04/06 Bidirectional voltage-level translator capacitance. As the level moves below the VCC(A) voltage, the channel resistance drops so that both A and B sides equal. The capacitance on both sides is connected to form the total capacitance and the pull-up resistors on both sides combine to the parallel equivalent resistance. The Ron of the device is small compared to the pull-up resistor values, so its effect on the pull-up resistance can be neglected and the fall is determined by the driver pulling the combined capacitance and pull-up resistor currents. An estimation of the actual fall time seen by the device is equal to the time it takes for the B-side to fall to the VCC(A) voltage and the time it takes for both sides to fall from the VCC(A) voltage to the VIL level. A description of the rise time applied to either An or Bn output going from LOW to HIGH is as follows. When the signal level is LOW, the Ron is at its minimum, so the A and B sides are essentially one node. They will rise together with an RC time constant that is the sum of all the capacitance from both sides and the parallel of the resistance from both sides. As the signal approaches the VCC(A) voltage, the channel resistance goes up and the waveforms separate, with the B side finishing its rise with the RC time constant of the B side. The rise to VCC(A) is essentially the same for both sides. There are some basic guidelines to follow that will help maximize the performance of the device: • Keep trace length to a minimum by placing the NVT device close to the processor. • The signal round trip time on trace should be shorter than the rise or fall time of signal to reduce reflections. • The faster the edge of the signal, the higher the chance for ringing. • The higher drive strength controlled by the pull-up resistor (up to 15 mA), the higher the frequency the device can use. The system designer must design the pull-up resistor value based on external current drive strength and limit the node capacitance (minimize the wire, stub, connector and trace length) to get the desired operation frequency result. 8. Limiting values [1] The input and input/output negative voltage ratings may be exceeded if the input and input/output clamp current ratings are observed. [2] Low duty cycle pulses, not DC because of heating. Table 9. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Over operating free-air temperature range. Symbol Parameter Conditions Min Max Unit Vref(A) reference voltage (A) 0.5 +6 V Vref(B) reference voltage (B) 0.5 +6 V VI input voltage 0.5[1] +6 V VI/O voltage on an input/output pin 0.5[1] +6 V Ich channel current (DC) - 128 mA IIK input clamping current VI <0V 50 - mA IOK output clamping current [2] 50 +50 mA Tstg storage temperature 65 +150 C |
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