STM32F101XF datasheet(76/117 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F101xF, STM32F101xG

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DocID16553 Rev 5

Figure 36. NAND controller waveforms for common memory write access

5.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (Electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports),

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

Table 41. Switching characteristics for NAND Flash write cycles(1)

1. CL = 15 pF.

Symbol

Parameter

Min

Max

Unit

tw(NWE)

FSMC_NWE low width

3tHCLK

tv(NWE-D)

FSMC_NWE low to FSMC_D[15:0] valid

th(NWE-D)

FSMC_NWE high to FSMC_D[15:0] invalid

2tHCLK + 2

td(ALE-NWE) FSMC_ALE valid before FSMC_NWE low

3tHCLK + 1.5

th(NWE-ALE) FSMC_NWE high to FSMC_ALE invalid

3tHCLK + 8

td(ALE-NOE) FSMC_ALE valid before FSMC_NOE low

2tHCLK

th(NOE-ALE) FSMC_NWE high to FSMC_ALE invalid

2tHCLK

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