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STM32F101XF Datenblatt(PDF) 77 Page - STMicroelectronics |
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STM32F101XF Datenblatt(HTML) 77 Page - STMicroelectronics |
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77 / 117 page ![]() DocID16553 Rev 5 77/117 STM32F101xF, STM32F101xG Electrical characteristics The test results are given in Table 42. They are based on the EMS levels and classes defined in application note AN1709. Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and pre qualification tests in relation with the EMC level requested for his application. Software recommendations The software flowchart must include the management of runaway conditions such as: • Corrupted program counter • Unexpected reset • Critical Data corruption (control registers...) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device is monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. Table 42. EMS characteristics Symbol Parameter Conditions Level/Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD = 3.3 V, LQFP144, TA = +25 °C, fHCLK= 36 MHz conforms to IEC 61000-4-2 2B VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, LQFP144, TA = +25 °C, fHCLK = 36 MHz conforms to IEC 61000-4-4 4A Table 43. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8/36 MHz SEMI Peak level VDD = 3.3 V, TA = 25 °C, LQFP144 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 8 dBµV 30 MHz to 130 MHz 27 130 MHz to 1 GHz 26 SAE EMI Level 4 - |
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