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STM32F101XF Datenblatt(PDF) 77 Page - STMicroelectronics

Teilenummer STM32F101XF
Bauteilbeschribung  Single-cycle multiplication and hardware division
PDF  117 Pages
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STM32F101XF Datenblatt(HTML) 77 Page - STMicroelectronics

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STM32F101xF, STM32F101xG
Electrical characteristics
The test results are given in Table 42. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 42. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP144,
TA = +25 °C, fHCLK= 36 MHz
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP144,
TA = +25 °C, fHCLK = 36 MHz
conforms to IEC 61000-4-4
4A
Table 43. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C,
LQFP144 package
compliant with
IEC 61967-2
0.1 MHz to 30 MHz
8
dBµV
30 MHz to 130 MHz
27
130 MHz to 1 GHz
26
SAE EMI Level
4
-



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