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STM32L021D4 Datenblatt(PDF) 49 Page - STMicroelectronics |
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STM32L021D4 Datenblatt(HTML) 49 Page - STMicroelectronics |
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49 / 114 page ![]() DocID027982 Rev 5 49/114 STM32L021x4 Electrical characteristics 93 6.3.2 Embedded reset and power control block characteristics The parameters given in the following table are derived from the tests performed under the ambient temperature condition summarized in Table 17. TA Temperature range Maximum power dissipation (range 6) –40 85 °C Maximum power dissipation (range 7) –40 105 Maximum power dissipation (range 3) –40 125 TJ Junction temperature range (range 6) -40 °C ≤ TA ≤ 85 ° –40 105 Junction temperature range (range 7) -40 °C ≤ TA ≤ 105 °C –40 125 Junction temperature range (range 3) -40 °C ≤ TA ≤ 125 °C –40 130 1. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and normal operation. 2. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled. 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 16: Thermal characteristics on page 47). Table 17. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Table 18. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit tVDD(1) VDD rise time rate BOR detector enabled 0 - ∞ µs/V BOR detector disabled 0 - 1000 VDD fall time rate BOR detector enabled 20 - ∞ BOR detector disabled 0 - 1000 TRSTTEMPO(1) Reset temporization VDD rising, BOR enabled - 2 3.3 ms VDD rising, BOR disabled(2) 0.4 0.7 1.6 VPOR/PDR Power on/power down reset threshold Falling edge 1 1.5 1.65 V Rising edge 1.3 1.5 1.65 VBOR0 Brown-out reset threshold 0 Falling edge 1.67 1.7 1.74 Rising edge 1.69 1.76 1.8 VBOR1 Brown-out reset threshold 1 Falling edge 1.87 1.93 1.97 Rising edge 1.96 2.03 2.07 VBOR2 Brown-out reset threshold 2 Falling edge 2.22 2.30 2.35 Rising edge 2.31 2.41 2.44 |
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